Optimizing the thermal treatment steps to open and functionalize

Optimizing the thermal treatment steps to open and functionalize the fullerene clusters are also shown to improve the yield of the grown nanotubes. The as-synthesized tubes appear to be predominantly SWCNT. selleck chemicals llc The high performance of the field-effect transistors fabricated using such catalyst-free SWCNTs make such tubes as promising candidates for future nanoelectronic applications. Acknowledgements II thanks the DAAD; GC acknowledges support from the South Korean Ministry of Education, Science, and

Technology Program, Project WCU ITCE no. R31-2008-000-10100-0; and MHR thanks the EU (ECEMP) and the Freistaat Sachsen. References 1. Tans SJ, Verschueren ARM, Dekker C: Room-temperature transistor based on find more a single carbon nanotube. Nature 1998, 393:49–52.CrossRef 2. Kang SJ, Kocabas C, Ozel , Shim M, Pimparkar N, Alam MA, Rotkin SV, Rogers JA: High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes. Nature Nanotech 2007, 2:230–236.CrossRef 3. Ibrahim I, Bachmatiuk A, Warner JH, Büchner B, Cuniberti G, Rümmeli MH: CVD grown horizontally aligned single wall carbon nanotubes: Synthesis routes and growth mechanisms. Small 2012, 8:1973–1992.CrossRef 4. Kocabas C, Hur S-H, Gaur A, Meit MA,

Shim M, Rogers JA: Guided growth of large-scale, horizontally aligned arrays of single-walled carbon nanotubes and their use in thin-film transistors. Small 2005, 1:1110–1116.CrossRef 5. Ishigami N, Ago H, Imamoto K, Tsuji M, Iakoubovskii K, Minami N: Crystal plane dependent growth of aligned single-walled carbon nanotubes on sapphire. J Am Chem Soc 2008, 130:9918–9924.CrossRef 6. Krupke R, Linden S, Rapp M, Hennrich F: Thin films of metallic carbon nanotubes prepared by dielectrophoresis. Adv Mater 2006, 18:1468–1470.CrossRef 7. Ibrahim I, Bachmatiuk A, Börrnert F, Blüher

J, Zhang S, Wolff U, Büchner B, Cuniberti G, Rümmeli MH: Optimizing substrate surface and PDGFR inhibitor catalyst conditions for high yield chemical vapor deposition grown epitaxially aligned single-walled carbon nanotubes. Carbon 2011, 49:5029–5037.CrossRef 8. Brukh R, Sae-Khow O, Mitra S: Stabilizing single-walled carbon nanotubes by removal of this website residual metal catalysts. Chem Phys Lett 2008, 459:149–152.CrossRef 9. Nel A, Xia T, Mädler L, Li N: Toxic potential of materials at the nanolevel. Science 2006, 311:622–627.CrossRef 10. Takagi D, Kobayashi Y, Homma Y: Carbon nanotube growth from diamond. J Am Chem Soc 2009, 131:6922–6923.CrossRef 11. Yao Y, Feng C, Zhang J, Liu Z: “Cloning” of single-walled carbon nanotubes via open-end growth mechanism. Nano Lett 2009, 9:1673–1677.CrossRef 12. Yu X, Zhang J, Choi W, Choi J-Y, Kim JM, Gan L, Liu Z: Cap formation engineering: from opened C-60 to single-walled carbon nanotubes. Nano Lett 2010, 10:3343–3349.CrossRef 13.

Comments are closed.