Nano research 2011, 4:658–665.CrossRef Competing Selleck PSI-7977 interests Belnacasan manufacturer The authors declare that they have no competing interests. Authors’ contributions FID carried out the synthesis and characterization. KRM improved the manuscript

and participated in the studies. MES conceived, planned, and directed the research and made final corrections to the manuscript. All authors read and approved the final manuscript.”
“Background Oxide materials are promising constituents for various scientific applications because of their versatile physical properties [1]. Oxide materials in low-dimensional forms are particularly demanded for manufacturing small devices. One-dimensional (1D) metal-oxide nanostructures with a high aspect ratio and good crystallinity are promising as building blocks for functional device architecture. Indium oxide (In2O3) is a wide bandgap semiconductor and has been used in various optoelectronic and electronic devices [2, 3]. For practical applications, In2O3 semiconductors are usually doped with other elements to increase their functionalities [2, 4–6]. Recently, Sn-doped In2O3 has attracted a considerable amount of attention because of its superior transparency

in the visible spectral region and low electrical resistivity. Sn-doped In2O3 is the transparent conducting oxide most widely used in scientific and industrial applications. selleckchem Sn-doped In2O3 can be integrated into solar cells, smart windows, photocurrent generators, displays, and light-emitting diodes [7, 8]. However, most studies on Sn-doped In2O3 have mainly focused on its thin-film structure because of the numerous applications of this material in optoelectronic and electronic devices [9, 10]. By contrast, there are few works on Sn-doped In2O3 regarding its 1D structure. Recently, comprehensive investigations on the 1D nanostructures of In2O3 have been conducted. In2O3 1D nanostructures have been synthesized using several chemical and physical methodologies [11, 12]. SSR128129E Thermal evaporation is the simplest method used to synthesize In2O3 nanostructures with a large density and high crystalline quality [13]. The source materials used to

grow 1D In2O3 nanostructures through thermal evaporation include metallic In powder and ceramic In2O3 powders mixed with carbon powders. Generally, a high growth temperature is required to obtain In2O3 nanostructures when using ceramic powders as the source material. In addition to the source materials, the evaporative synthesis of these nanostructures can be further classified depending on whether or not a metallic catalyst is used during crystal growth. For optoelectronic nanodevice applications, In2O3 nanostructures are doped with trace Sn to enhance their optical and electrical characteristics [14, 15]. Sn-doped In2O3 nanostructures have several superior properties including a high metallic conductivity, excellent oxidation resistance, and good thermal stability.